1n4150 www.vishay.com vishay semiconductors rev. 1.8, 16-jul-12 1 document number: 85522 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diodes mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10k per 13" reel (52 mm tape), 50k/box tap/10k per ammopack (52 mm tape), 50k/box features ? silicon epitaxial planar diode ? low forward voltage drop ? aec-q101 qualified ? high forward current capability ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed switch and gene ral purpose use in computer and industrial applications parts table part ordering code type marking internal construction remarks 1n4150 1n4150-tr or 1n4150-tap 1n4150 sin gle diode tape an d reel/a mmopack absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v peak forward surge current t p = 1 s i fsm 4a average peak forward current i frm 600 ma forward continuous current i f 300 ma average forward current v r = 0 i f(av) 150 ma power dissipation l = 4 mm, t l = 45 c p tot 440 mw l = 4 mm, t l ? 25 c p tot 500 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
1n4150 www.vishay.com vishay semiconductors rev. 1.8, 16-jul-12 2 document number: 85522 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage package dimensions in millimeters (inches): do-35 electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 ma v f 540 620 mv i f = 10 ma v f 660 740 mv i f = 50 ma v f 760 860 mv i f = 100 ma v f 820 920 mv i f = 200 ma v f 870 1000 mv reverse current v r = 50 v i r 100 na v r = 50 v, t j = 150 c i r 100 a diode capacitance v r = 0 v, f = 1 mhz, v hf = 50 mv c d 2.5 pf reverse recovery time i f = i r = (10 to 100) ma, i r = 0.1 x i r , r l = 100 ? t rr 4ns 0 40 80 120 160 200 0.01 0.1 1 10 100 i - re v erse c u rrent (a) r t j - j u nction temperat u re (c) 94 9100 scattering limit v r = 50 v 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9162 scattering limit t j = 25 c 94 9366 re v . 6 - date: 19. december 2011 doc u ment no.: sb- v -3906.04-031(4) 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] cathode identification 1.7 [0.067] 1.3 [0.050] 3.1 min. [0.120] ? 0.6 max. [0.024] ? 0.4 min. [0.015]
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